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VRRM IFAVM IFSM VF0 rF VDClink
= = = = = =
2500 950 21 1.2 0.38 1500
V A kA V m V
Fast Recovery Diode
5SDF 11F2501
Doc. No. 5SYA1113-04 Sep. 01
* Patented free-floating silicon technology * Low on-state and switching losses * Optimized for use as freewheeling diode in GTO converters * Standard press-pack housing, hermetically cold-welded * Cosmic radiation withstand rating
Blocking
VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate 2500 V 50 mA 1500 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 125C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air.
Mechanical data
Fm a Mounting force
(see Fig. 12)
min. max. 20 kN 24 kN
2 2
Acceleration:
Device unclamped Device clamped 50 m/s 200 m/s 0.46 kg 30 mm 20 mm
m DS Da
Weight Surface creepage distance Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDF 11F2501
On-state (see Fig. 2, 3)
IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current oI2dt Max. surge current integral 950 A 1500 A 21 kA 65 kA
2 2.2106 A s 2 2.1106 A s
Half sine wave, Tc = 85C
tp tp tp tp IF
= = = = =
10 ms 1 ms 10 ms 1 ms 1000 A
Before surge: Tc = Tj = 125C After surge: VR 0 V
VF VF0 rF
Forward voltage drop Threshold voltage Slope resistance
1.6 V 1.2 V 0.38 m
Approximation for IF = 400...4000 A
Tj = 125C
Turn-on (see Fig. 4, 5)
Vfr Peak forward recovery voltage 16 V di/dt = 500 A/s, Tj = 125C
Turn-off (see Fig. 6 to 11)
Irr Qrr Err Reverse recovery current Reverse recovery charge Turn-off energy 550 A 1200 C 0.45 J di/dt = 300 A/s, Tj = 125C, IF = 700 A, VRM = 2600 V,
CS = 2F (GTO snubber circuit)
Thermal (see Fig. 1)
Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case RthCH Thermal resistance case to heatsink Analytical function for transient thermal impedance. -40...125C -40...125C 40 K/kW 40 K/kW 20 K/kW 10 K/kW 5 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 20... 24 kN
Z thJC (t) =
a
n
i
1 11.83 0.432
2 4.26 0.071
3 1.63 0.01
4 2.28 0.0054
R i (1 - e
- t / i
)
R i(K/kW)
i =1
i(s)
Fm = 20... 24 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 2 of 6
5SDF 11F2501
Fig. 1
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125C.
Fig. 3
Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 3 of 6
5SDF 11F2501
Fig. 4
Typical forward voltage waveform when the diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt (max. values).
Fig. 6
Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in GTO circuits.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 4 of 6
5SDF 11F2501
Fig. 7
Reverse recovery current vs. turn off di/dt (max. values).
Fig. 8
Reverse recovery charge vs. turn off di/dt (max. values).
Fig. 9
Turn-off energy vs. turn-off di/dt for IF = 300 A (max. values).
Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700 A (max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 5 of 6
5SDF 11F2501
Fig. 11 Turn-off energy vs. turn-off di/dt for IF = 2000 A (max. values).
Fig. 12 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1113-04 Sep. 01

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